Статья «Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode, "Физика и техника полупроводников"»

The electrical properties of the Ir/Ru Schottky contacts on w-InGaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. The obtained mean barrier height and ideality factor from I-V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C-V measurements and the corresponding values are 0.62 V, 1.20 x 10cm and 0.79eV, respectively. The interface state density (N) obtained from forward bias I-V characteristics by considering the series resistance (R) values are lower without considering the series resistance (R). Furthermore, the interface state density (N) and relaxation time (t ) are also calculated from the experimental C-f and G-f measurements. The N values obtained from the I-V characteristics are almost three orders higher than the Nss values obtained from the C- f and G- f measurements. The experimental results depict that N and t are decreased with bias voltage. The frequency dependence of the series resistance (R) is attributed to the particular distribution density of interface states.