Статья «A comparative study on the electronic and optical properties of SbSe thin film, "Физика и техника полупроводников"»

The thin film of SbSe was deposited by thermal evaporation method and the film was annealed in N flow in a three zone furnace at a temperature of 290° C for 30 min. The structural properties were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and Raman spectroscopy, respectively. It is seen that the as-deposited film is amorphous and the annealed film is polycrystalline in nature. The surface of SbSe film is oxidized with a thickness of 1.15 nm investigated by X-ray photolecetron spectroscopy (XPS) measurement. Spectroscopic ellipsometry (SE) and UV-vis spectroscopy measurements were carried out to study the optical properties of Sb2Se3 film. In addition, the first principles calculations were applied to study the electronic and optical properties of SbSe. From the theoretical calculation it is seen that Sb2Se3 is intrinsically an indirect band gap semiconductor. Importantly, the experimental band gap is in good agreement with the theoretical band gap. Furthermore, the experimental values of n, k, e, and c are much closer to the theoretical results. However, the obtained large dielectric constants and refractive index values suggest that exciton binding energy in SbSe should be relatively small and an antireflective coating is recommended to enhance the light absorption of SbSe for thin film solar cells application.