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Статья «INFLUENCE OF THE STRUCTURAL AND PROCESS PARAMETERS OF A LOW-DOPED CHANNEL JUNCTIONLESS MOSFET ON THE DEVICE CHANNEL DEPLETION, "Электронная техника. Серия 3. Микроэлектроника"»

Авторы:
  • Korolev M.A.1
  • Krasukov A.Yu.2
  • Chaplygin Yu.A.3
стр. 66-76
Платно
1 National Research University of Electronic Technology “MIET”, 2 National Research University of Electronic Technology “MIET”, 3 National Research University of Electronic Technology “MIET”
Аннотация:
An analysis of the development of MOS transistors with a built-in channel is presented and the prospects for devices with a lightly doped working area are shown. Using TCAD tools, it is shown that the electric field of the drain n+-n-junction, depending on its location relative to the edge of the channel of a junctionless MOS transistor with a lightly doped working area and the junction depth, significantly affects the distribution of potential and electrons in the channel of the device.
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