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Статья «TO THE QUESTION OF СHARGE TRANSPORT MECHANISM IN SILICON NITRIDE-BASED MEMRISTORS, "Электронная техника. Серия 3. Микроэлектроника"»

Авторы:
  • Makeev V.V.1
  • Teplov G.S.2
  • Sattarov P.Sh.3
стр. 43-51
Платно
1 MERI SC, 2 MERI SC, 3 MERI SC
Аннотация:
The results of the investigation of VAC and сharge transport mechanism in silicon nitride-based memristors are described. An attempt was made to explain the variation of characteristics and the complexity of modelling by the cluster structure of the functional layer based on non-stoichiometric nitride. Suggested that with real thicknesses of the functional layer in 4–8 nm, the homogeneity of its phase composition becomes of great importance. The presence of clusters commensurate with the film thickness and having a different chemical composition add an element of randomness to the results of VAC measurement and do not allow correctly calculating model parameters.
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